DMN32D2LV document number: ds31121 rev. 6 - 2 1 of 5 www.diodes.com april 2010 ? diodes incorporated DMN32D2LV dual n-channel enhancement mode field effect transistor features ? dual n-channel mosfet ? low on-resistance ? very low gate threshold voltage, 1.2v max ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra-small surface mount package ? esd protected gate ? lead free by design/rohs compliant (note 2) ? "green" device (note 3) mechanical data ? case: sot-563 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.006 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 30 v gate-source voltage v gss 10 v drain current (note 1) i d 400 ma thermal characteristics @t a = 25c unless otherwise specified total power dissipation (note 1) p d 400 mw thermal resistance, junction to ambient (note 1) r ja 313 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current @ t c = 25c i dss ? ? 1 a v ds = 30v, v gs = 0v gate-body leakage i gss ? ? 10 500 a na v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs ( th ) 0.6 ? 1.2 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? ? ? ? ? ? 2.2 1.5 1.2 v gs = 1.8v, i d = 20ma v gs = 2.5v, i d = 20ma v gs = 4.0v, i d = 100ma forward transconductance |y fs | 100 ? ? ms v ds =10v, i d = 0.1a source-drain diode forward voltage v sd 0.5 ? 1.4 v v gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss ? 39 ? pf v ds = 3v, v gs = 0v f = 1.0mhz output capacitance c oss ? 10 ? pf reverse transfer capacitance c rss ? 3.6 ? pf switching time turn-on time t on ? 11 ? ns v dd = 5v, i d = 10 ma, v gs = 5v turn-off time t off ? 51 ? ns notes: 1. device mounted on fr-4 pcb, 1 in ch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com. 2. no purposefully added lead. 3. diodes inc.?s ?green? policy can be found on our website at http://www.diodes.com /products/lead_free/index.php. 4. short duration pulse test used to minimize self-heating effect. sot-563 top view schematic and transistor diagram top view s 1 d 1 d 2 s 2 g 1 g 2 esd protected
DMN32D2LV document number: ds31121 rev. 6 - 2 2 of 5 www.diodes.com april 2010 ? diodes incorporated DMN32D2LV
DMN32D2LV document number: ds31121 rev. 6 - 2 3 of 5 www.diodes.com april 2010 ? diodes incorporated DMN32D2LV 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , static drain-source on-resistance (normalized) ds(on) fig. 7 normalized static drain-source on-resistance vs. ambient temperature v = 4v i = 100ma gs d v = 2.5v i = 20ma gs d v = 1.8v i = 20ma gs d 0 10 20 30 40 50 0 5 10 15 20 v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) t fig. 10 typical capacitance c iss c oss c rss f = 1 mhz ordering information (note 5) part number case packaging DMN32D2LV-7 sot-563 3000/tape & reel notes: 5. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information (note 6) notes: 6. package is non-polarized. parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). date code key year 2007 2008 2009 2010 2011 2012 code u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d dv = product type marking code (see note 6) ym = date code marking y = year (ex: u = 2007) m = month (ex: 9 = september) dv ym s 1 d 2 g 1 d 1 s 2 g 2
DMN32D2LV document number: ds31121 rev. 6 - 2 4 of 5 www.diodes.com april 2010 ? diodes incorporated DMN32D2LV package outline dimensions suggested pad layout sot-563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
DMN32D2LV document number: ds31121 rev. 6 - 2 5 of 5 www.diodes.com april 2010 ? diodes incorporated DMN32D2LV important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com
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